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UF3C170400K3S

MOSFET 1700V/400mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth

N-Channel 1700 V 7.6A (Tc) 100W (Tc) Through Hole TO-247-3

Manufacturer	Qorvo	Product Category	MOSFET
RoHS	Details	Technology	SiC
Mounting Style	Through Hole	Package / Case	TO-247-3
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	1.7 kV	Id - Continuous Drain Current	7.6 A
Rds On - Drain-Source Resistance	1.07 Ohms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	6 V	Qg - Gate Charge	27.5 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	100 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Tradename	SiC FET
Series	UF3C	Brand	Qorvo
Configuration	Single	Fall Time	28 ns
Product Type	MOSFET	Rise Time	13 ns
Factory Pack Quantity	600	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	34 ns
Typical Turn-On Delay Time	17 ns	Unit Weight	0.211644 oz
Package	Tube	Product Status	Active
FET Type	N-Channel	Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	515mOhm @ 5A, 12V	Vgs(th) (Max) @ Id	6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	27.5 nC @ 15 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 100 V	Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Supplier Device Package	TO-247-3	Base Product Number	UF3C170400