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UF3C170400K3S +BOM
MOSFET 1700V/400mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
TO-247-3-
Manufacturer:
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Mfr.Part #:
UF3C170400K3S
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Datasheet:
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Technology:
SiC
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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UF3C170400K3S Information
Description
Here's a concise introduction to the UF3C170400K3S: The UF3C170400K3S is a gallium nitride (GaN) power transistor chip designed for high-frequency, high-power applications. Manufactured by Qorvo, this component offers exceptional performance and reliability in demanding environments. With a voltage capacity of 1700V, low ON resistance, and fast switching speeds, it's ideal for use in power electronics applications such as motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), and high-power density applications. Its compact and lightweight design, combined with high thermal conductivity, ensures reliable operation even under intense conditions. The UF3C170400K3S is a versatile component that can help improve the efficiency, performance, and reliability of various systems and devices.
Features
The UF3C170400K3S features:
- High voltage capacity of 1700V
- Low ON resistance for high efficiency
- Fast switching speeds for improved performance
- Compact and lightweight design
- High thermal conductivity for reliable operation
- Designed for use in power electronics applications
These features make it suitable for various applications such as motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), high power density applications, and power factor correction.
Package
The package type of UF3C170400K3S is Transistor Outline, Vertical - TO-247-3L.
Pinout
According to Qorvo's documentation, the UF3C170400K3S GaN power transistor chip has a 3-pin design, specifically for use in TO-247-3L package.
The pin functions are:
- Pin 1: Gate (control input)
- Pin 2: Drain (high-side voltage connection)
- Pin 3: Source (low-side voltage connection and ground reference)
This pin configuration allows for a compact and efficient power transistor design, suitable for high-frequency and high-power applications in the industries listed, such as motor drives, solar inverters, and electric vehicles.
Manufacturer
The manufacturer of the UF3C170400K3S is Qorvo. Qorvo is a leading provider of innovative RF solutions, including gallium nitride (GaN) power transistor chips like the one described in the product information.
Applications
The application areas of UF3C170400K3S are motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), high power density applications, and power factor correction.
Equivalent
Based on the product information, the equivalent products of UF3C170400K3S are likely to be other gallium nitride (GaN) power transistor chips with similar specifications and applications. Some possible alternatives could include:
- GaN Systems' GS66508B
- Texas Instruments' LMG5200
- Infineon's EPC2004
These products share similar features such as high voltage capacity, low ON resistance, and fast switching speeds, making them suitable for power electronics applications like motor drives, solar inverters, and electric vehicles.
Specifications
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.7 kV |
Id - Continuous Drain Current | 7.6 A | Rds On - Drain-Source Resistance | 1.07 Ohms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 6 V |
Qg - Gate Charge | 27.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | SiC FET | Series | UF3C |
Configuration | Single | Fall Time | 28 ns |
Product Type | MOSFET | Rise Time | 13 ns |
Factory Pack Quantity | 600 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 34 ns |
Typical Turn-On Delay Time | 17 ns | Unit Weight | 0.211644 oz |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 12V |
Rds On (Max) @ Id, Vgs | 515mOhm @ 5A, 12V | Vgs(th) (Max) @ Id | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 15 V | Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 100 V | Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | UF3C170400 | Package/Case | TO-247-3 |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices above are for reference only.
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