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UF3C170400K3S +BOM

MOSFET 1700V/400mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth

UF3C170400K3S Information

Description

Here's a concise introduction to the UF3C170400K3S: The UF3C170400K3S is a gallium nitride (GaN) power transistor chip designed for high-frequency, high-power applications. Manufactured by Qorvo, this component offers exceptional performance and reliability in demanding environments. With a voltage capacity of 1700V, low ON resistance, and fast switching speeds, it's ideal for use in power electronics applications such as motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), and high-power density applications. Its compact and lightweight design, combined with high thermal conductivity, ensures reliable operation even under intense conditions. The UF3C170400K3S is a versatile component that can help improve the efficiency, performance, and reliability of various systems and devices.

Features

The UF3C170400K3S features:

  • High voltage capacity of 1700V
  • Low ON resistance for high efficiency
  • Fast switching speeds for improved performance
  • Compact and lightweight design
  • High thermal conductivity for reliable operation
  • Designed for use in power electronics applications

These features make it suitable for various applications such as motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), high power density applications, and power factor correction.

Package

The package type of UF3C170400K3S is Transistor Outline, Vertical - TO-247-3L.

Pinout

According to Qorvo's documentation, the UF3C170400K3S GaN power transistor chip has a 3-pin design, specifically for use in TO-247-3L package.

The pin functions are:

  • Pin 1: Gate (control input)
  • Pin 2: Drain (high-side voltage connection)
  • Pin 3: Source (low-side voltage connection and ground reference)

This pin configuration allows for a compact and efficient power transistor design, suitable for high-frequency and high-power applications in the industries listed, such as motor drives, solar inverters, and electric vehicles.

Manufacturer

The manufacturer of the UF3C170400K3S is Qorvo. Qorvo is a leading provider of innovative RF solutions, including gallium nitride (GaN) power transistor chips like the one described in the product information.

Applications

The application areas of UF3C170400K3S are motor drives, solar inverters, power supplies, electric vehicles, renewable energy systems, industrial automation, wind turbines, uninterruptible power supplies (UPS), high power density applications, and power factor correction.

Equivalent

Based on the product information, the equivalent products of UF3C170400K3S are likely to be other gallium nitride (GaN) power transistor chips with similar specifications and applications. Some possible alternatives could include:

  • GaN Systems' GS66508B
  • Texas Instruments' LMG5200
  • Infineon's EPC2004

These products share similar features such as high voltage capacity, low ON resistance, and fast switching speeds, making them suitable for power electronics applications like motor drives, solar inverters, and electric vehicles.

UF3C170400K3S

Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 7.6 A Rds On - Drain-Source Resistance 1.07 Ohms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 6 V
Qg - Gate Charge 27.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 100 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UF3C
Configuration Single Fall Time 28 ns
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 600 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 34 ns
Typical Turn-On Delay Time 17 ns Unit Weight 0.211644 oz
FET Type N-Channel Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 515mOhm @ 5A, 12V Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 27.5 nC @ 15 V Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 100 V Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number UF3C170400 Package/Case TO-247-3

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