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IPB025N10N3GATMA1

MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3

Manufacturer: Infineon
Mfr.Part #: IPB025N10N3GATMA1
Datasheet: IPB025N10N3GATMA1 Datasheet (PDF)
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
EDA/CAD Models: Request Free CAD Models for IPB025N10N3GATMA1

Email: [email protected]

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Tel: +852 95804164

IPB025N10N3GATMA1 General Description

Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN

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Key Features

N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Extremely low on-resistance R DS(on)
High current capability
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	180 A	Rds On - Drain-Source Resistance	2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	206 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	300 W
Channel Mode	Enhancement	Tradename	OptiMOS
Series	OptiMOS 3	Configuration	Single
Fall Time	28 ns	Forward Transconductance - Min	100 S
Height	4.4 mm	Length	10 mm
Product Type	MOSFET	Rise Time	58 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	84 ns
Typical Turn-On Delay Time	34 ns	Width	9.25 mm
Part # Aliases	IPB025N10N3 G SP000469888	Unit Weight	0.056438 oz