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IPD50N03S2-07

MOSFET N-Ch 30V 50A DPAK-2 OptiMOS

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IPD50N03S2-07 General Description

N-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 50 A Rds On - Drain-Source Resistance 7.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 68 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 136 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename OptiMOS Configuration Single
Fall Time 30 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 18 ns
Width 6.22 mm Part # Aliases IPD5N3S27XT SP000254462 IPD50N03S207ATMA1
Unit Weight 0.011640 oz

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Availability: 7072 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.557 $0.56
200+ $0.217 $43.40
500+ $0.209 $104.50
1000+ $0.204 $204.00

The prices below are for reference only.

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