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GA03JT12-247

Power Field-Effect Transistor,

Manufacturer: GeneSiC Semiconductor
Mfr.Part #: GA03JT12-247
Datasheet: GA03JT12-247 Datasheet (PDF)
Technology: SiC
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Configuration: Single
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GA03JT12-247 General Description

SIC JUNCTION TRANSISTOR, 1.2KV, 3A, TO-247AB; Breakdown Voltage Vbr:-; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:-; Gate-Source Cutoff Voltage Vgs(off) Max:-; Transistor Type:JFET; MSL:- RoHS Compliant: Yes

Specifications

Product Category	JFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Single	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	3 A	Rds On - Drain-Source Resistance	470 mO
Pd - Power Dissipation	5 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	SiC Junction Transistor
Product Type	JFETs	Factory Pack Quantity	30
Subcategory	Transistors	Type	JFET
Unit Weight	0.215171 oz