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SI2319CDS-T1-GE3
Transistor: P-MOSFET; unipolar; -40V; -4.4A; 0.077ohm; 2.5W; -55+150 deg.C; SMD; SOT23
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Manufacturer: VISHAY
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Mfr.Part #: SI2319CDS-T1-GE3
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Datasheet: SI2319CDS-T1-GE3 Datasheet (PDF)
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Package/Case: SOT-23
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Product Type: mosfet
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RoHS:
Availability: 5298 PCS
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SI2319CDS-T1-GE3 General Description
MOSFET,P CH,40V,4.4A,DIODE,SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-40V; On State Resistance:0.064ohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3.1A; Power Dissipation:1.25W
Key Features
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
Application
SWITCHINGSpecifications
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 4.4 A | Rds On - Drain-Source Resistance | 77 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 21 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 9 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 8 ns | Width | 1.6 mm |
Part # Aliases | SI2319CDS-T1-BE3 SI2319CDS-GE3 | Unit Weight | 0.000282 oz |
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Availability: 5298 PCS
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