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See Technical Specifications

VP2110K1-G

MOSFET, P-Channel Enhancement-Mode, -100V, 12 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VP2110K1-G
Datasheet:

VP2110K1-G Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Number of Channels:

1 Channel
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for VP2110K1-G

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Tel: +852 95804164

VP2110K1-G General Description

VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain

Microchip Technology, Inc Original Stock

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	SMD/SMT	Number of Channels:	1 Channel
Transistor Polarity:	P-Channel	Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	120 mA	Rds On - Drain-Source Resistance:	12 Ohms
Vgs th - Gate-Source Threshold Voltage:	1.5 V	Vgs - Gate-Source Voltage:	10 V
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	360 mW	Configuration:	Single
Channel Mode:	Enhancement	Packaging:	Reel
Height:	0.95 mm	Length:	2.9 mm
Product:	MOSFET Small Signal	Transistor Type:	1 P-Channel
Type:	FET	Width:	1.3 mm
Forward Transconductance - Min:	150 mS	Fall Time:	4 ns
Product Type:	MOSFET	Rise Time:	5 ns
Factory Pack Quantity:	3000	Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	5 ns	Typical Turn-On Delay Time:	4 ns
Unit Weight:	0.000282 oz	Tags	VP2110, VP211, VP21, VP2
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	120 mA	Rds On - Drain-Source Resistance	12 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	360 mW
Channel Mode	Enhancement	Configuration	Single
Fall Time	4 ns	Forward Transconductance - Min	150 mS
Height	0.95 mm	Length	2.9 mm
Product	MOSFET Small Signal	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	FET	Typical Turn-Off Delay Time	5 ns
Typical Turn-On Delay Time	4 ns	Width	1.3 mm
Unit Weight	0.000282 oz

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Ratings and Reviews

j**a 02/26/2022

Quality for cardboard is excellent, but delivery is 5 days.

D**x 12/25/2021

Good quality parts, trusted supplier. Thanks Yael.

G**n 06/21/2021

Delivery on the donkey, through the mountains. in the end received.

L**n 05/15/2020

Order: programmer ch341a delivered in 81 days. Immediately checked the work! (The driver and the program can be found on the internet). Program well and quickly! Before work, usb contacts disappeared (for reliability!). Thanks to the seller: communication-5. (answered all questions). Seller-i recommend!!! (And i recommend the product too). P.s. If there are questions on the quality of work-i will write later.