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SI2328DS-T1-E3

SOT-23 Single N-Channel Power Mosfet with 100 V Rating and 0.25 Ohms Resistance

Manufacturer:

Vishay
Mfr.Part #:

SI2328DS-T1-E3
Datasheet:

SI2328DS-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2328DS-T1-E3

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SI2328DS-T1-E3 General Description

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:730mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:1.15A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Key Features

Halogen-free According to IEC 61249-2-21 Definition
100 % Rg and UIS Tested
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	1.15 A	Rds On - Drain-Source Resistance	250 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	3.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	730 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Forward Transconductance - Min	4 S
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	9 ns
Typical Turn-On Delay Time	7 ns	Width	1.6 mm
Part # Aliases	SI2328DS-T1-BE3 SI2328DS-E3	Unit Weight	0.000282 oz