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CENW42

Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 1 W Through Hole TO-237

  • Manufacturer: Central Semiconductor Corp

  • Mfr.Part #: CENW42

  • Datasheet: CENW42 Datasheet (PDF) pdf-icon

  • Transistor Type: NPN

  • Current - Collector (Ic) (Max): 500 mA

  • Voltage - Collector Emitter Breakdown (Max): 300 V

  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA

  • EDA/CAD Models: eda-cad.png Request Free CAD Models for CENW42

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CENW42 General Description

Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 1 W Through Hole TO-237

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V Power - Max 1 W
Frequency - Transition 50MHz Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole

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