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FJP5304D

NPN Triple Diffused Planar Silicon Transistor

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tel Tel: +852 95804164

FJP5304D General Description

Bipolar (BJT) Transistor NPN 400 V 4 A 70 W Through Hole TO-220-3

Key Features

  • Wide Safe Operating Area
  • Built-in Free-Wheeling Diode
  • Suitable for Electronic Ballast Application
  • Small Variance in Storage Time

Application

  • This product is general usage and suitable for many different applications.

Specifications

Mfr onsemi Series -
Package Bulk Product Status Obsolete
Transistor Type NPN Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 400 V Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max) 250mA DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A, 5V
Power - Max 70 W Frequency - Transition -
Operating Temperature - Mounting Type Through Hole
Supplier Device Package TO-220-3 Base Product Number FJP530

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