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SI2328DS-T1-GE3

N-Channel 100 V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)

email Email: [email protected]
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tel Tel: +852 95804164

SI2328DS-T1-GE3 General Description

N-Channel 100 V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition
  • 100 % Rg and UIS Tested
  • TrenchFET® Power MOSFET
  • Compliant to RoHS Directive 2002/95/EC

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 1.15 A
Drain-source On Resistance-Max 0.25 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.73 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Availability: 4650 PCS

+BOM
Qty. Unit Price Ext. Price
5+ $0.209 $1.04
50+ $0.169 $8.45
150+ $0.152 $22.80
500+ $0.131 $65.50
3000+ $0.121 $363.00
6000+ $0.115 $690.00

The prices below are for reference only.

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