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IRFB260N

Power Field-Effect Transistor, 56A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Manufacturer: Infineon Technologies AG
Mfr.Part #: IRFB260N
Datasheet: IRFB260N Datasheet (PDF)
Package/Case: TO-220
Product Type: N-Channel Power MOSFET
RoHS:
Lifecycle: OBSOLETE

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IRFB260N General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Package	TO-220	Polarity	N
RthJC max	0.4 K/W	Tj max	175.0 °C
VDS max	200.0 V	VGS max	20.0 V
Mounting	THT	Ptot max	380.0 W
RDS (on) max	40.0 mΩ	VGS(th) max	4.0 V
VGS(th) min	2.0 V	ID max	56.0 A
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

N**s 03/27/2024

Coli well protected: bubble envelope and static anti-electricity pouch

G**n 11/02/2020

Everything is fine!!!!

U**a 10/28/2020

Impressed with Avaq's excellent customer service and fast delivery! The ALC892-GR components arrived in perfect condition, and I couldn't be happier with my purchase.

L**s 02/14/2020

All OK, work, for UK 22 days