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IPP050N10NF2S

Infineon's StrongIRFET? 2 power MOSFET 100 V features low RDS(on) of 5.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP050N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Manufacturer:

Infineon Technologies AG
Mfr.Part #:

IPP050N10NF2S
Datasheet:

IPP050N10NF2S Datasheet (PDF)
ID max:

110.0 A
IDpuls max:

440.0 A
Mounting:

THT
Ptot max:

150.0 W
EDA/CAD Models:

Request Free CAD Models for IPP050N10NF2S

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IPP050N10NF2S General Description

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP050N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Specifications

ID max	110.0 A	IDpuls max	440.0 A
Mounting	THT	Ptot max	150.0 W
Polarity	N	RDS (on) max	5.0 mΩ
VDS max	100.0 V	VGS(th) max	3.8 V
VGS(th) min	2.2 V	Operating Temperature max	175.0 °C
Operating Temperature min	-55.0 °C	Battery voltage	48-72 V