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See Technical Specifications

IRF7811AV

N-Channel MOSFET Transistor, SO Package

Manufacturer:

Infineon
Mfr.Part #:

IRF7811AV
Datasheet:

IRF7811AV Datasheet (PDF)
Mounting:

SMD
Ptot max:

3.5 W
Tj max:

150.0 °C
Moisture Sensitivity Level:

1
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IRF7811AV General Description

IRF7811AV is a Dual N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in a compact SO-8 package. It is designed for high power switching applications in automotive and industrial environments. The device features a low ON-resistance of 8.5mΩ at a Vgs of 10V, making it suitable for applications requiring high efficiency and low power dissipation.The IRF7811AV has a maximum drain-source voltage (Vds) of 30V, a continuous drain current (Id) of 24A, and a pulsed drain current (Idm) of 96A for short durations. It is capable of operating over a wide temperature range of -55°C to 175°C, making it suitable for harsh operating conditions.The MOSFET is characterized by fast switching speeds and low gate charge, enabling efficient operation in high-frequency switching applications. Its dual N-Channel configuration allows for improved thermal performance and current handling capabilities.

Key Features

Logic level gate drive
Low on-resistance
Fast switching speed
High peak current capability
Industry-standard TO-220 package
RoHS compliant

Application

Automotive electronics
Power management systems
Industrial applications
Switching regulators
Battery charging circuits
Motor control systems
Power supplies
Lighting control
Solar power converters
Telecommunication systems

Specifications

Mounting	SMD	Ptot max	3.5 W
Tj max	150.0 °C	Moisture Sensitivity Level	1
Polarity	N	RthJA max	50.0 K/W
VDS max	30.0 V	VGS max	20.0 V
RDS (on) max	14.0 mΩ	VGS(th) max	3.0 V
VGS(th) min	1.0 V	ID max	10.8 A