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IRF1503
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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Manufacturer:
Infineon Technologies AG
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Mfr.Part #:
IRF1503
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Datasheet:
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Polarity:
N
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RthJC max:
0.45 K/W
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VDS max:
30.0 V
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Mounting:
THT
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EDA/CAD Models:
Availability: 5774 PCS
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IRF1503 General Description
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Key Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Specifications
Polarity | N | RthJC max | 0.45 K/W |
VDS max | 30.0 V | Mounting | THT |
Ptot max | 330.0 W | Tj max | 175.0 °C |
VGS max | 20.0 V | RDS (on) max | 3.3 mΩ |
VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
ID max | 240.0 A |
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Availability: 5774 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRF1503, guaranteed quotes back within 12hr.