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See Technical Specifications

IRF8910

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Manufacturer:

Infineon
Mfr.Part #:

IRF8910
Datasheet:

IRF8910 Datasheet (PDF)
Moisture Sensitivity Level:

1
Polarity:

N+N
Tj max:

150.0 °C
VGS max:

20.0 V
EDA/CAD Models:

Request Free CAD Models for IRF8910

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Tel: +852 95804164

IRF8910 General Description

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Infineon Inventory

Infineon Original Stock

Specifications

Moisture Sensitivity Level	1	Polarity	N+N
Tj max	150.0 °C	VGS max	20.0 V
Ptot max	2.0 W	RthJA max	62.5 K/W
VDS max	20.0 V	RDS (on) max	18.3 mΩ
VGS(th) max	2.55 V	VGS(th) min	1.65 V
ID max	10.0 A	Operating Temperature max	150.0 °C
Operating Temperature min	-55.0 °C

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Availability: 6960 PCS

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IRF8910

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Availability: 6960 PCS

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