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HFA3127RZ

RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-QFN (3x3)

Manufacturer: Renesas Technology Corp
Mfr.Part #: HFA3127RZ
Datasheet: HFA3127RZ Datasheet (PDF)
Package/Case: 100
Product Type: Thyristors
RoHS:
Lifecycle: Active

Email: [email protected]

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Tel: +852 95804164

HFA3127RZ General Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a f_T of 8GHz while the PNP transistors provide a f_T of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.

Key Features

NPN transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . 130
NPN early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP transistor (f_T) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
PNP current gain (h_FE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP early voltage (V_A). . . . . . . . . . . . . . . . . . . . . . . . .20V
Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
Complete isolation between transistors
Pin compatible with industry standard 3XXX series arrays
Pb-free (RoHS compliant)

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors	Mfr	Renesas Electronics America Inc
Series	-	Package	Tube
Product Status	Active	Transistor Type	5 NPN
Voltage - Collector Emitter Breakdown (Max)	12V	Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	3.5dB @ 1GHz	Gain	-
Power - Max	150mW	DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 2V
Current - Collector (Ic) (Max)	65mA	Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount	Package / Case	16-VFQFN Exposed Pad
Supplier Device Package	16-QFN (3x3)	Base Product Number	HFA3127