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See Technical Specifications

IXTH110N10L2

N-Channel 100 V 110A (Tc) 600W (Tc) Through Hole TO-247 (IXTH)

Manufacturer:

IXYS
Mfr.Part #:

IXTH110N10L2
Datasheet:

IXTH110N10L2 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for IXTH110N10L2

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IXTH110N10L2 General Description

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA).When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.

Key Features

Designed for linear operation
Guaranteed FBSOA at 75°C
Low on-resistances R
DS(on)
Avalanche rated
International standard packages
UL 94 V-0 Flammability qualified
(molding epoxies)

Application

E-fuses and hot-swap circuits
Battery management
Current regulators
Linear amplifiers
Fan controllers
Programmable loads
Soft-start control

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	3000 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	110 A	Drain-source On Resistance-Max	0.018 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247AD
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	600 W
Pulsed Drain Current-Max (IDM)	300 A	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON