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IPP60R190P6

N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3

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IPP60R190P6 General Description

N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3

Key Features

  • Increased MOSFET dv/dt ruggedness
  • Extremely low losses due to very low FOM Rdson Qg and Eoss
  • Very high commutation ruggedness
  • Easy to use/drive
  • Pb-free plating, Halogen free mold compound
  • Qualified for industrial grade applications according to JEDEC(J-STD20
  • and JESD22)

Specifications

Series CoolMOS™ P6 FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 100 V Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number IPP60R190

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Availability: 5323 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $2.414 $2.41
10+ $2.106 $21.06
30+ $1.915 $57.45
100+ $1.717 $171.70
500+ $1.628 $814.00
1000+ $1.590 $1,590.00

The prices below are for reference only.

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