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See Technical Specifications

APT100GT120JRDQ4

1200V Non-Punch-Thru IGBT.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

APT100GT120JRDQ4
Datasheet:

APT100GT120JRDQ4 Datasheet (PDF)
Power Dissipation (W) [max]:

250 - 962
Collector Current (dc) (A) [max]:

18 - 90
feature-technology:

Non-Punch-Through
feature-channel-type:

N
EDA/CAD Models:

Request Free CAD Models for APT100GT120JRDQ4

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APT100GT120JRDQ4 General Description

IGBT products from Microchip provide high-quality solutions for awide range of high-voltage and high-power applications. The switching frequencyrange spans from DC for minimal conduction loss to 150 kHz forvery-high-power-density Switch Mode Power Supply (SMPS) applications. There are sixproduct series that utilize three different IGBT technologies:Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as aCombi product packaged with an anti-parallel DQ series diode.

The Ultra Fast NPT-IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.

Key Features

Microchip Technology, Inc Original Stock

Specifications

Product Type	Discrete IGBT	Power Dissipation (W) [max]	250 - 962
Collector Current (dc) (A) [max]	18 - 90	feature-technology	Non-Punch-Through
feature-channel-type	N	feature-configuration	Single Dual Emitter
feature-maximum-gate-emitter-voltage-v	±20	feature-maximum-collector-emitter-voltage-v	1200
feature-maximum-continuous-collector-current-a	123	feature-maximum-power-dissipation-mw	570
feature-packaging	Tube	feature-pin-count	4
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc-exceeds-threshold	No