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MDI100-12A3
IGBT Module NPT Single 1200 V 135 A 560 W Chassis Mount Y4-M5
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Manufacturer:
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Mfr.Part #:
MDI100-12A3
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Datasheet:
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IGBT Type:
NPT
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Configuration:
Single
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Voltage - Collector Emitter Breakdown (Max):
1200 V
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Current - Collector (Ic) (Max):
135 A
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EDA/CAD Models:
Availability: 3512 PCS
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MDI100-12A3 General Description
IGBT Module NPT Single 1200 V 135 A 560 W Chassis Mount Y4-M5
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | Series | - |
IGBT Type | NPT | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 135 A |
Power - Max | 560 W | Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 75A |
Current - Collector Cutoff (Max) | 5 mA | Input Capacitance (Cies) @ Vce | 5.5 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Base Product Number | MDI100 | Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.2 kV | Collector-Emitter Saturation Voltage: | 2.2 V |
Continuous Collector Current at 25 C: | 135 A | Gate-Emitter Leakage Current: | 300 nA |
Pd - Power Dissipation: | 560 W | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 125 C | Packaging: | Bulk |
Height: | 30 mm | Length: | 94 mm |
Maximum Gate Emitter Voltage: | 20 V | Mounting Style: | Chassis Mount |
Product Type: | IGBT Modules | Series: | MDI100 |
Factory Pack Quantity: | 6 | Subcategory: | IGBTs |
Technology: | Si | Width: | 34 mm |
Unit Weight: | 6.349313 oz |
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Availability: 3512 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $151.718 | $151.72 |
198+ | $60.538 | $11,986.52 |
498+ | $58.514 | $29,139.97 |
1002+ | $57.514 | $57,629.03 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for MDI100-12A3, guaranteed quotes back within 12hr.