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SI4062DY-T1-GE3
60V 32.1A 7.8W 4.2m´Î@10V20A 2.6V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
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Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI4062DY-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60 V
Availability: 5900 PCS
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SI4062DY-T1-GE3 General Description
MOSFET, N CH, 60V, 32.1A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 32.1A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
Key Features
TrenchFET® Power MOSFET |100 % R g and UIS Tested |Material categorization: For definitions of compliance please see www.vishay.com/doc?99912Application
DC/DC Primary Side Switch |Industrial |Synchronous Rectification |Load Switch |DC/DC Converters |DC/AC InvertersSpecifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 32.1A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V | Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 30 V | Power Dissipation (Max) | 7.8W (Tc) |
Mounting Type | Surface Mount | Base Product Number | SI4062 |
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Availability: 5900 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.672 | $0.67 |
10+ | $0.564 | $5.64 |
30+ | $0.509 | $15.27 |
100+ | $0.455 | $45.50 |
500+ | $0.424 | $212.00 |
1000+ | $0.406 | $406.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI4062DY-T1-GE3, guaranteed quotes back within 12hr.