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See Technical Specifications

TIP120

Darlington Transistors NPN Power Darlington

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

TIP120
Datasheet:

TIP120 Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tube
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for TIP120

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

TIP120 General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
V_CEO(sus) = 60 Vdc (Min) TIP120, TIP125
V_CEO(sus) = 80 Vdc (Min) TIP121, TIP126
V_CEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
V_CE(sat) = 2.0 Vdc (Max) @ I_C= 3.0 Adc
= 4.0 Vdc (Max) @ I_C= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tube
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	60 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	60 V
Maximum Collector Cut-off Current	500 uA	Pd - Power Dissipation	65 W
Mounting Style	Through Hole	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	TIP120
Continuous Collector Current	5 A	DC Collector/Base Gain hfe Min	1000
Product Type	Darlington Transistors	Factory Pack Quantity	50
Subcategory	Transistors	Part # Aliases	TIP120_NL
Unit Weight	0.042823 oz