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See Technical Specifications

LND150N3-G

N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

Manufacturer: Microchip Technology, Inc
Mfr.Part #: LND150N3-G
Datasheet: LND150N3-G Datasheet (PDF)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
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LND150N3-G General Description

The LND150N3-G is an N-channel enhancement-mode MOSFET designed for switching applications and amplification of electronic signals. Enhancement-mode MOSFETs require a positive voltage at the gate terminal to allow current to flow between the source and drain terminals.

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Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection

Application

Switching Circuits: MOSFETs serve as electronic switches in applications such as power supplies, motor control, and digital logic circuits.
Amplifiers: They can be used as amplification devices in analog and audio amplifier circuits.
Voltage Regulation: MOSFETs are used in voltage regulation and voltage level shifting applications.
Signal Processing: In analog and digital signal processing circuits, MOSFETs are employed for signal amplification and switching.
LED Drivers: Used in LED driver circuits for controlling the brightness of LEDs in various lighting applications.
Power Inverters: In power inverter circuits for converting DC power to AC power in applications like solar inverters and uninterruptible power supplies (UPS).
Motor Control: Employed in motor control circuits for applications such as robotics, drones, and industrial automation.
Power Management: Used for various power management functions, including load switching and battery management.
High-Frequency Applications: In radio frequency (RF) and microwave circuits for switching and signal amplification.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Mfr	Microchip Technology
Series	-	Package	Bag
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	30mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	1000Ohm @ 500µA, 0V	Vgs(th) (Max) @ Id	-
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	10 pF @ 25 V
FET Feature	Depletion Mode	Power Dissipation (Max)	740mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Supplier Device Package	TO-92-3	Base Product Number	LND150