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2N1711 +BOM

Bipolar (BJT) Transistor NPN 50 V 500 mA 800 mW Through Hole TO-5AA

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2N1711 General Description

Bipolar (BJT) Transistor NPN 50 V 500 mA 800 mW Through Hole TO-5AA

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 500 mA Pd - Power Dissipation 800 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 175 C Series 2N1711
Continuous Collector Current 500 mA DC Collector/Base Gain hfe Min 40
DC Current Gain hFE Max 300 Height 1.5 mm
Length 9.4 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 500 Subcategory Transistors
Technology Si Width 9.4 mm

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