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See Technical Specifications

2N1711 +BOM

With a gain of 8dB, this transistor is suitable for amplifying low-level signals

Manufacturer:

Stmicroelectronics
Mfr.Part #:

2N1711
Datasheet:

2N1711 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for 2N1711

Package

The package type of 2N1711 is TO-5-3.

Pinout

According to Motorola Mobility LLC's documentation, the 2N1711 is a power BJT (bipolar junction transistor) packaged in TO-5-3 format. The pin count for this component is three (3). As for its function, the 2N1711 is a general-purpose NPN Darlington transistor.

Manufacturer

The manufacturer of the 2N1711 is Motorola Mobility LLC.

Equivalent

According to various sources, the equivalent products of 2N1711 are:

NTE510
Fairchild 2N510
Philips BC517
STMicroelectronics BCS517

Please note that these equivalents may not be exact matches in terms of specifications or performance, but they can serve as substitutes in certain applications.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	75 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	500 mA	Pd - Power Dissipation	800 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 175 C	Series	2N1711
Continuous Collector Current	500 mA	DC Collector/Base Gain hfe Min	40
DC Current Gain hFE Max	300	Height	1.5 mm
Length	9.4 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	500	Subcategory	Transistors
Technology	Si	Width	9.4 mm
Package/Case	TO-5-3