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2N3055 +BOM
60V 115W 5@10A,4V 15A NPN TO-3 Bipolar Transistors - BJT ROHS
TO-3 -2-
Manufacturer:
Onsemi
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Mfr.Part #:
2N3055
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Datasheet:
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Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
70 V
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EDA/CAD Models:
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Availability: 4916 PCS
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2N3055 Information
Description
The 2N3055 is a popular NPN power transistor, widely used in various applications due to its excellent safe operating area (SOA) and high current gain. It's designed for general-purpose amplification and switching circuits, making it suitable for audio, industrial control, and automotive systems. This transistor features a high DC current gain of 20-70, allowing it to handle high currents while maintaining a relatively low saturation voltage of 1.1V. Its SOA ensures reliable operation even under heavy load conditions. The 2N3055 is available in a TO-3 package and has Pb-free options for environmentally friendly applications. Its versatility, reliability, and ease of use make it a popular choice among engineers and hobbyists alike.
Features
The 2N3055 features include:
- DC Current Gain - hFE = 20-70 @ IC = 4 Adc
- Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area
- Pb-Free Packages are Available
These features make the 2N3055 a suitable component for various applications, including power amplifiers, motor control, and switching circuits.
Package
According to the product information, the package type for the 2N3055 is TO-3.
Pinout
The 2N3055 is a NPN power transistor with a TO-3 package, having three pins:
- Base (B): Input pin for controlling the transistor's operation
- Collector (C): Output pin that connects to the load or circuit being controlled
- Emitter (E): Output pin that provides a reference point for the transistor's operation
This transistor is commonly used in power amplifiers, motor control circuits, and other applications where high current and voltage are required.
Manufacturer
The manufacturer of the 2N3055 is Microchip Technology.
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 70 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.1 V |
Pd - Power Dissipation | 117 W | Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Continuous Collector Current | 15 A | DC Collector/Base Gain hfe Min | 20 at 4 A, 4 V |
DC Current Gain hFE Max | 70 at 4 A, 4 V | Height | 11.43 mm |
Length | 39.94 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 10 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
Package/Case | TO-3 -2 |
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In Stock: 4,916
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $116.799 | $116.80 |
500+ | $43.612 | $21,806.00 |
1000+ | $42.827 | $42,827.00 |
200+ | $45.200 | $9,040.00 |
The prices above are for reference only.