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JANTXV2N5667

Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-5 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JANTXV2N5667

  • Datasheet:

    JANTXV2N5667 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    5 A

  • Voltage - Collector Emitter Breakdown (Max):

    300 V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 1A, 5A

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

JANTXV2N5667 General Description

Bipolar (BJT) Transistor NPN 300 V 5 A 1.2 W Through Hole TO-5

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 5 A Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 5V Power - Max 1.2 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/455
Mounting Type Through Hole Base Product Number 2N5667

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Availability: 7215 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $62.164 $62.16
200+ $24.804 $4,960.80
500+ $23.975 $11,987.50
1000+ $23.565 $23,565.00

The prices below are for reference only.

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