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2N2905

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 600 mW Through Hole TO-39

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2N2905 General Description

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 600 mW Through Hole TO-39

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 0.6 A Collector-Emitter Voltage-Max 40 V
Configuration SINGLE DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-205AD JESD-30 Code O-MBCY-W3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.6 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD OVER NICKEL Terminal Form WIRE
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 200 MHz
Turn-off Time-Max (toff) 300 ns Turn-on Time-Max (ton) 45 ns

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Availability: 5427 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $53.065 $53.06
200+ $20.535 $4,107.00
500+ $19.813 $9,906.50
1000+ $19.458 $19,458.00

The prices below are for reference only.

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