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See Technical Specifications

2N3773 +BOM

40V collector-emitter voltage

Manufacturer:

Onsemi
Mfr.Part #:

2N3773
Datasheet:

2N3773 Datasheet (PDF)
Factory Pack Quantity:

1
EDA/CAD Models:

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2N3773 General Description

The 2N3773 is a power transistor originally designed for high-power amplification and switching applications. It is a silicon NPN bipolar junction transistor (BJT) with a maximum collector current rating of 16A and a maximum collector-emitter voltage of 140V. The transistor has a low collector-emitter saturation voltage, making it suitable for high-efficiency power conversion applications.The 2N3773 has a high transition frequency of 4 MHz, which allows for high-frequency operation and fast switching speeds. This transistor is housed in a TO-3 metal package with a heat sink for efficient heat dissipation, allowing it to handle high power dissipation levels.The 2N3773 is widely used in audio amplifiers, power supplies, motor control circuits, and other high-power applications where high current and voltage ratings are required. It is a reliable and rugged transistor that can withstand high operating temperatures and harsh environmental conditions.

Key Features

The 2N3773 is a high power NPN bipolar junction transistor designed for general purpose applications

It has a maximum collector current of 16A and a maximum collector-emitter voltage of 16V

It has a low collector-emitter saturation voltage and a high current gain, making it suitable for high power amplification and switching applications

Application

The 2N3773 is a high power NPN transistor commonly used in power amplification circuits, such as audio amplifiers, power supplies, and motor control applications

It can handle high current and voltage levels, making it suitable for applications where a high power output is required