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IXTH21N50 +BOM

MOSFET with a 0.25 ohm on-state resistance for high current applications

Manufacturer:

Littelfuse
Mfr.Part #:

IXTH21N50
Datasheet:

IXTH21N50 Datasheet (PDF)
Drain-Source Voltage (V):

500
Maximum On-Resistance @ 25 ℃ (Ohm):

0.25
Continuous Drain Current @ 25 ℃ (A):

21
Gate Charge (nC):

160
EDA/CAD Models:

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IXTH21N50 General Description

The IXTH21N50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS Corporation. It is designed for high voltage applications, offering a breakdown voltage of 500 volts (Vds). The device is built on advanced MOSFET technology, providing low on-resistance (Rds(on)) to minimize power losses and improve efficiency in high-power circuits.With a maximum continuous drain current (Id) rating of 21 amps, the IXTH21N50 is suitable for various power switching applications such as power supplies, motor control, and lighting systems. It features a compact TO-247 package, which facilitates easy mounting and thermal management.The MOSFET is characterized by its high switching speed, allowing for rapid turn-on and turn-off transitions, which is crucial in applications requiring precise control and high-frequency operation. Additionally, it exhibits low gate charge (Qg) and gate-to-source charge (Qgs), reducing drive requirements and enabling efficient gate control.

Key Features

The IXTH21N50 is a MOSFET transistor designed for high-speed power switching applications

It features a drain-source voltage of 500V, a continuous drain current of 21A, and a low on-state resistance

With its fast switching characteristics and rugged design, it's suitable for various power electronics applications where efficiency and reliability are crucial

Application

The IXTH21N50 is a high voltage power MOSFET ideal for applications in switch mode power supplies, DC-DC converters, motor drives, and automotive systems

It provides excellent performance in low on-state resistance, high switching speed, and high ruggedness, making it suitable for high power applications requiring reliability and efficiency

Specifications

Drain-Source Voltage (V)	500	Maximum On-Resistance @ 25 ℃ (Ohm)	0.25
Continuous Drain Current @ 25 ℃ (A)	21	Gate Charge (nC)	160
Input Capacitance, CISS (pF)	4200	Thermal resistance [junction-case] (K/W)	0.42
Configuration	Single	Typical Reverse Recovery Time (ns)	600
Power Dissipation (W)	300	Sample Request	No