This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

IXTK62N25 +BOM

MOSFET 62 Amps 250V 0.035 Rds

IXTK62N25 Information

Description

The IXTK62N25 is a Power Field-Effect Transistor (FET) designed by JSMSEMI. It's an N-channel device with a maximum current rating of 62A and a voltage rating of 250V. The FET has a low on-resistance of 0.035 ohms, making it suitable for high-power applications. The IXTK62N25 is packaged in the TO-264AA package, which features three pins. Its metal-oxide semiconductor (MOS) construction provides improved performance and reliability compared to traditional bipolar junction transistors (BJTs). This FET is ideal for use in power electronic circuits that require high current and voltage handling capabilities, such as motor drives, power supplies, and DC-DC converters.

Package

According to the product information, the package type of IXTK62N25 is TO-264AA (also referred to as TO-264).

Pinout

Based on the product information, the IXTK62N25 is a Power Field-Effect Transistor with a package type of TO-264AA, which has 3 pins.

The pin functions are:

  • Pin 1: Drain (D)
  • Pin 2: Gate (G)
  • Pin 3: Source (S)

This information is based on the typical pinout for a TO-264AA package.

Manufacturer

According to the product information, the manufacturer of IXTK62N25 is JSMSEMI.

Equivalent

Based on the product information, IXTK62N25 is a Power Field-Effect Transistor with specific characteristics (62A ID, 250V, etc.). Equivalent products would be other power FETs with similar specifications. Some possible alternatives could be:

  • STP16NF50 from STMicroelectronics
  • IRF840 from International Rectifier
  • N-channel MOSFETs from other manufacturers like ON Semiconductor or Texas Instruments

Please note that these are just potential equivalents and not necessarily exact matches, as the specific characteristics of IXTK62N25 may vary.

Specifications

Pbfree Code Yes Part Life Cycle Code Transferred
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V Drain Current-Max (ID) 62 A
Drain-source On Resistance-Max 0.035 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA JESD-30 Code R-PSFM-T3
JESD-609 Code e1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W Pulsed Drain Current-Max (IDM) 248 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN SILVER COPPER Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case TO-264-3

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method +

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method +

fedex
Fedex
ups
UPS
dhl
DHL
tnt
TNT
Packing +

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

365-Day Product Quality Guarantee +

We promise to provide 365 days quality assurance service for all our products.
After Sales Service +

Returns and exchanges are supported, provided the items remain in their original condition.

Reviews

You need to log in to reply. Sign In | Sign Up

pay transport
colse