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IXFH80N65X2 +BOM

N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

IXFH80N65X2 Information

Description

Here's a concise introduction to the IXFH80N65X2: The IXFH80N65X2 is an ultra-low on-resistance power field-effect transistor (FET) from Littelfuse/IXYS, designed for high-performance applications. This TO-247-3 packaged device features fast body diodes and rugged dv/dt capabilities, making it suitable for demanding industrial and automotive applications. With its low package inductance and international standard packaging, the IXFH80N65X2 offers advantages such as higher efficiency, high power density, easy mounting, and space savings. Its avalanche-rated design ensures reliable operation under harsh conditions. This FET is ideal for a range of applications, including industrial switched-mode and resonant-mode power supplies, electric vehicle battery chargers, AC and DC motor drives, DC-DC converters, renewable-energy inverters, Power Factor Correction (PFC) circuits, and robotics and servo control.

Features

The IXFH80N65X2 from Littelfuse/IXYS is a Power Field-Effect Transistor (FET) with the following features:

  • Ultra low on-resistance RDS(ON)
  • Low gate charge Qg
  • Fast body diode and dv/dt ruggedness
  • Avalanche rated for reliable operation
  • Low package inductance for reduced electromagnetic interference (EMI)

These features make it suitable for high-power applications such as industrial power supplies, electric vehicle chargers, motor drives, DC-DC converters, renewable-energy inverters, and Power Factor Correction (PFC) circuits.

Package

The package type of IXFH80N65X2 is TO-247-3.

Pinout

According to Littelfuse/IXYS's documentation, the IXFH80N65X2 power field-effect transistor has a TO-247-3 package with 3 pins.

The pin functions are as follows:

  • Pin 1: Collector (C)
  • Pin 2: Base (B)
  • Pin 3: Emitter (E)

Please note that I only provided the information from the given product description and manufacturer's documentation.

Manufacturer

The manufacturer of the IXFH80N65X2 is Littelfuse/IXYS, which is a leading global manufacturer of electronic components, including semiconductors, fuses, and relays.

Applications

According to the product description, the IXFH80N65X2 has the following application areas:

  • Industrial switched-mode and resonant-mode power supplies
  • Electric vehicle battery chargers
  • AC and DC motor drives
  • DC-DC converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

Equivalent

Based on the product information, IXFH80N65X2 is a Power Field-Effect Transistor from Littelfuse/IXYS. Equivalent products may include:

  • STP16NF06L (STMicroelectronics)
  • IPW60R045D (Infineon Technologies)
  • FET10P06S (Fairchild Semiconductor)

Please note that equivalent products may vary depending on specific requirements and applications.

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 80 A Drain-source On Resistance-Max 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 1.6 pF
JEDEC-95 Code TO-247AD JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 890 W Pulsed Drain Current-Max (IDM) 160 A
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case TO-247-3

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