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IXTQ82N25P +BOM

N-Channel 250 V 82A (Tc) 500W (Tc) Through Hole TO-3P

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IXTQ82N25P General Description

N-Channel 250 V 82A (Tc) 500W (Tc) Through Hole TO-3P

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 82 A Rds On - Drain-Source Resistance 35 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 142 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 W
Channel Mode Enhancement Series IXTQ82N25
Configuration Single Fall Time 22 ns
Height 20.3 mm Length 15.8 mm
Product Type MOSFET Rise Time 20 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 78 ns
Typical Turn-On Delay Time 29 ns Width 4.9 mm
Unit Weight 0.194007 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $3.976 $3.98
10+ $3.777 $37.77
30+ $3.658 $109.74
90+ $3.539 $318.51
450+ $3.484 $1,567.80
900+ $3.459 $3,113.10

The prices below are for reference only.

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