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VP3203N3-G

MOSFET, P-Channel Enhancement-Mode, -30V, 0.6 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VP3203N3-G
Datasheet:

VP3203N3-G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

650mA (Tj)
EDA/CAD Models:

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VP3203N3-G General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	650mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 10mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	740mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	VP3203
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	650 mA
Rds On - Drain-Source Resistance	1 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	740 mW	Channel Mode	Enhancement
Configuration	Single	Fall Time	25 ns
Forward Transconductance - Min	1000 mmho	Height	5.33 mm
Length	5.21 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	FET
Width	4.19 mm	Unit Weight	0.016000 oz