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FDB3632

High-power N-Channel MOSFET with PowerTrench® technology, capable of handling up to 80A of current at 100V with a low resistance of 9mΩ

Manufacturer:

Onsemi
Mfr.Part #:

FDB3632
Datasheet:

FDB3632 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDB3632

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDB3632 General Description

N-Channel PowerTrench^® MOSFET 100V, 80A, 9mΩ, The latest shielded gate PowerTrench^® MOSFET, which combines a smaller Q_SYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

Key Features

R_DS(ON) = 7.5mΩ (Typ.) @ V_GS = 10V, I_D = 80A
Q_G(tot) = 84nC (Typ.) @ V_GS = 10V
Low Miller Charge
Low Q_RR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant

Application

AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
Other Data Processing

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	80 A
Rds On - Drain-Source Resistance	7.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	110 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	310 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDB3632
Configuration	Single	Fall Time	46 ns
Height	4.83 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	39 ns
Factory Pack Quantity	800	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	96 ns	Typical Turn-On Delay Time	30 ns
Width	9.65 mm	Part # Aliases	FDB3632_NL
Unit Weight	0.139332 oz