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See Technical Specifications

2N3055

60V 115W 5@10A,4V 15A NPN TO-3 Bipolar Transistors - BJT ROHS

Manufacturer:

Onsemi
Mfr.Part #:

2N3055
Datasheet:

2N3055 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

70 V
EDA/CAD Models:

Request Free CAD Models for 2N3055

Email: [email protected]

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Tel: +852 95804164

2N3055 General Description

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Key Features

DC Current Gain - h_FE = 20-70 @ I_C = 4 Adc
Collector-Emitter Saturation Voltage - V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
Excellent Safe Operating Area
Pb-Free Packages are Available

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	70 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	1.1 V
Pd - Power Dissipation	117 W	Gain Bandwidth Product fT	4 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	15 A	DC Collector/Base Gain hfe Min	20 at 4 A, 4 V
DC Current Gain hFE Max	70 at 4 A, 4 V	Height	11.43 mm
Length	39.94 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	10	Subcategory	Transistors
Technology	Si	Width	26.67 mm