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NDS332P +BOM

20V 1A 500mW 300mΩ@4.5V,1.1A 1V@250uA P Channel SOT-23-3 MOSFETs ROHS

NDS332P General Description

Featuring a proprietary high cell density design, these transistors are engineered to provide superior functionality in a variety of applications. Their small outline package makes them suitable for space-constrained designs without sacrificing performance. The NDS332P is the perfect choice for designers looking to optimize power management in their projects, thanks to its high efficiency and low power consumption

Key Features

  • -1 A, -20 V
    RDS(ON) = 0.41Ω @ VGS= -2.7 V
    RDS(ON) = 0.3 Ω @ VGS = -4.5 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits
    VGS(th) < 1.0V
  • Proprietary package design using copper lead frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface Mount package

Application

  • This product is general usage and suitable for many different applications

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1 A Rds On - Drain-Source Resistance 350 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Series NDS332P
Configuration Single Fall Time 30 ns
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 8 ns Width 1.4 mm
Part # Aliases NDS332P_NL Unit Weight 0.001270 oz

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