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NDS332P +BOM
20V 1A 500mW 300mΩ@4.5V,1.1A 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
SSOT-3-
Manufacturer:
Onsemi
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Mfr.Part #:
NDS332P
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 7125 PCS
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NDS332P General Description
Featuring a proprietary high cell density design, these transistors are engineered to provide superior functionality in a variety of applications. Their small outline package makes them suitable for space-constrained designs without sacrificing performance. The NDS332P is the perfect choice for designers looking to optimize power management in their projects, thanks to its high efficiency and low power consumption
Key Features
- -1 A, -20 V
RDS(ON) = 0.41Ω @ VGS= -2.7 V
RDS(ON) = 0.3 Ω @ VGS = -4.5 V - Very low level gate drive requirements allowing direct operation in 3V circuits
VGS(th) < 1.0V - Proprietary package design using copper lead frame for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface Mount package
Application
- This product is general usage and suitable for many different applications
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1 A | Rds On - Drain-Source Resistance | 350 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Series | NDS332P |
Configuration | Single | Fall Time | 30 ns |
Height | 1.12 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 30 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 8 ns | Width | 1.4 mm |
Part # Aliases | NDS332P_NL | Unit Weight | 0.001270 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,125
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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