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VN2460N3-G
MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm.
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Manufacturer: Microchip Technology, Inc
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Mfr.Part #: VN2460N3-G
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Datasheet: VN2460N3-G Datasheet (PDF)
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FET Type: N-Channel
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Technology: MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss): 600 V
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Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
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Availability: 3972 PCS
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VN2460N3-G General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Key Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | - |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V | Current - Continuous Drain (Id) @ 25°C | 160mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 20Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 2mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V | FET Feature | - |
Power Dissipation (Max) | 1W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | VN2460 |
Product Category | MOSFET | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 160 mA |
Rds On - Drain-Source Resistance | 20 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V | Qg - Gate Charge | - |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 20 ns |
Height | 5.33 mm | Length | 5.21 mm |
Product Type | MOSFET | Rise Time | 10 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | FET |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
Width | 4.19 mm | Unit Weight | 0.016000 oz |
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Availability: 3972 PCS
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