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SPP16N50C3

MOSFET N-Ch 560V 16A TO220-3 CoolMOS C3

SPP16N50C3 General Description

N-Channel 560 V 16A (Tc) 160W (Tc) Through Hole PG-TO220-3-1

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 460 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.28 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 48 A
Qualification Status COMMERCIAL Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 560 V
Id - Continuous Drain Current 16 A Rds On - Drain-Source Resistance 280 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 160 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C3 Fall Time 8 ns
Height 15.65 mm Length 10 mm
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 10 ns Width 4.4 mm
Part # Aliases SP000014460 SPP16N5C3XK SPP16N50C3HKSA1 Unit Weight 0.068784 oz

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Availability: 7741 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.363 $1.36
200+ $0.528 $105.60
500+ $0.509 $254.50
1000+ $0.500 $500.00

The prices below are for reference only.