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See Technical Specifications

IXTP50N25T

Field-Effect Transistor IXTP50N25T

Manufacturer:

Littelfuse
Mfr.Part #:

IXTP50N25T
Datasheet:

IXTP50N25T Datasheet (PDF)
Drain-Source Voltage (V):

250
Maximum On-Resistance @ 25 ℃ (Ohm):

0.06
Continuous Drain Current @ 25 ℃ (A):

50
Gate Charge (nC):

78
EDA/CAD Models:

Request Free CAD Models for IXTP50N25T

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IXTP50N25T General Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Key Features

International Standard Packages
Low R
DS(ON)
Avalanche rated
High Current Handling Capability
Fast Intrinsic Rectifier
Advantages:
Easy to Mount
Space Savings
High power density

Application

Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
Battery Chargers
Uninterrupted Power Supplies
AC motor drives
DC Choppers

Specifications

Drain-Source Voltage (V)	250	Maximum On-Resistance @ 25 ℃ (Ohm)	0.06
Continuous Drain Current @ 25 ℃ (A)	50	Gate Charge (nC)	78
Input Capacitance, CISS (pF)	4000	Thermal resistance [junction-case] (K/W)	0.31
Configuration	Single	Typical Reverse Recovery Time (ns)	166
Power Dissipation (W)	400	Sample Request	Yes
Check Stock	Yes