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IXFM40N30
Transistor IXFM40N30
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Manufacturer:
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Mfr.Part #:
IXFM40N30
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Datasheet:
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Drain-Source Voltage (V):
300
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Maximum On-Resistance @ 25 ℃ (Ohm):
0.088
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Continuous Drain Current @ 25 ℃ (A):
40
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Gate Charge (nC):
177
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EDA/CAD Models:
Availability: 5227 PCS
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IXFM40N30 General Description
MOSFET, N, TO-3; Transistor type:MOSFET; Voltage, Vds typ:300V; Current, Id cont:40A; Resistance, Rds on:0.088ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-3; Temperature, operating range:9453130; Case style, alternate:TO-204AA; Current, Idm pulse:160A; Pins, No. of:2; Power dissipation:300W; Power, Pd:300W; Resistance, Rds on max:0.088ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:300V; Voltage, Vgs th max:4V
Key Features
- International Standard Packages
- High Current Handling Capability
- Low R
- DS(on)
- HDMOS process
- Avalanche Rated
- Low Package Inductance
- Fast intrinsic diode
Application
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC Motor Drives
- Temperature and Lighting Controls
- Advantages:
- Easy to mount
- Space savings
- High power density
Specifications
Drain-Source Voltage (V) | 300 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.088 |
Continuous Drain Current @ 25 ℃ (A) | 40 | Gate Charge (nC) | 177 |
Input Capacitance, CISS (pF) | 4800 | Thermal resistance [junction-case] (K/W) | 0.42 |
Configuration | Single | Power Dissipation (W) | 298 |
Maximum Reverse Recovery (ns) | 250 | Sample Request | No |
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Availability: 5227 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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