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2SC2873 +BOM

2A 2V SOT-89-3 Transistors

Manufacturer:

Toshiba
Mfr.Part #:

2SC2873
Datasheet:

2SC2873 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

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2SC2873 General Description

The 2SC2873 is a silicon NPN epitaxial planar transistor commonly used in audio and general-purpose amplifier applications. It is designed for high-frequency and low-noise amplification with a power dissipation of 1 watt and a collector current of 100 milliamperes. The maximum voltage for collector-base and collector-emitter is 30 volts and 20 volts, respectively.This transistor has a small-signal current gain (hFE) of 60 to 200 at a collector current of 10 mA and a collector-emitter voltage of 6 volts. The transition frequency (ft) is around 500 MHz, making it suitable for high-frequency applications. The package type for the 2SC2873 is TO-92, which is a widely used transistor package due to its compact size and ease of mounting.

Key Features

High breakdown voltage of 40V
Low saturation voltage of 0.2V
Low noise figure
High DC current gain
Fast switching speed
Low capacitance
Good linearity
Designed for RF amplifier and oscillator applications
High power dissipation capability

Application

RF power amplifiers
High frequency circuits
Communication equipments
Signal processing systems
Audio amplifiers

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	2 A	Gain Bandwidth Product fT	120 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	2SC	Continuous Collector Current	2 A
DC Collector/Base Gain hfe Min	70	DC Current Gain hFE Max	240
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors