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See Technical Specifications

FQPF33N10L

N-Channel Logic Level

Manufacturer:

Onsemi
Mfr.Part #:

FQPF33N10L
Datasheet:

FQPF33N10L Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FQPF33N10L

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FQPF33N10L General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

18A, 100V, R_DS(on) = 52mΩ(Max.) @V_GS = 10 V, I_D = 9A
Low gate charge ( Typ. 30nC)
Low C_rss ( Typ. 70pF)
100% avalanche tested
175°C maximum junction temperature rating

Application

LCD TV
PDP TV
LED TV

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	18 A
Rds On - Drain-Source Resistance	52 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	40 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	41 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQPF33N10L
Configuration	Single	Fall Time	120 ns
Forward Transconductance - Min	22 S	Height	16.07 mm
Length	10.36 mm	Product Type	MOSFET
Rise Time	470 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	70 ns
Typical Turn-On Delay Time	17 ns	Width	4.9 mm
Unit Weight	0.068784 oz