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IRF9640

P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-220AB

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IRF9640 General Description

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • P-channel
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • Specifications

    Product Category MOSFET Technology Si
    Mounting Style Through Hole Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
    Id - Continuous Drain Current 11 A Rds On - Drain-Source Resistance 500 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
    Channel Mode Enhancement Series IRF9640
    Configuration Single Fall Time 29 ns
    Height 16.3 mm Length 10.67 mm
    Product Type MOSFET Rise Time 45 ns
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 18 ns
    Width 4.7 mm Unit Weight 0.068784 oz

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