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FQA85N06 +BOM

TO-3P Through Hole package for easy mounting on PCBs

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FQA85N06 General Description

N-Channel 60 V 100A (Tc) 214W (Tc) Through Hole TO-3P

Key Features

  • 100A, 60V, RDS(on) = 0.010Ω @VGS = 10 V
  • Low gate charge ( typical 86 nC)
  • Low Crss ( typical 165 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 10 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 214 W
Channel Mode Enhancement Configuration Single
Fall Time 170 ns Forward Transconductance - Min 57 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 230 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 175 ns Typical Turn-On Delay Time 40 ns
Width 5 mm Part # Aliases FQA85N06_NL
Unit Weight 0.162260 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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