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See Technical Specifications

NVMFS6H800NT1G +BOM

Single N-Channel Power MOSFET 80V, 203A, 2.1mΩ

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NVMFS6H800NT1G
Datasheet:

NVMFS6H800NT1G Datasheet (PDF)
Case Outline:

507BA
MSL Temp (°C):

260
Container Type:

REEL
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for NVMFS6H800NT1G

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NVMFS6H800NT1G General Description

In the world of automotive applications, the NVMFS6H800NT1G stands out as a reliable and high-performing MOSFET. Its AEC-Q101 Qualification and PPAP capability make it a trusted choice for automotive projects that require top-notch performance. With its compact size, high thermal performance, and Wettable Flank Option, this MOSFET is ready to take on the toughest challenges in the automotive industry

Key Features

Small Footprint (5x6 mm)
Low R_DS(on)
Low Q_G and Capacitance
NVMFS6H800NWF − Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant

Application

Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems

Specifications

Status	Active	Case Outline	507BA
MSL Temp (°C)	260	Container Type	REEL
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	203 A	Rds On - Drain-Source Resistance	2.1 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	85 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	200 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Configuration	Single	Fall Time	85 ns
Forward Transconductance - Min	138 S	Product Type	MOSFET
Rise Time	89 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Typical Turn-Off Delay Time	97 ns
Typical Turn-On Delay Time	25 ns	Unit Weight	0.026455 oz