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2N7000
Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 Bag
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Manufacturer:
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Mfr.Part #:
2N7000
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 5068 PCS
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2N7000 General Description
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Key Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Application
- Small Servo Motor Control
- Power MOSFET Gate Drivers
- Assorted Switching Applications
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 5 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1 W |
Channel Mode | Enhancement | Configuration | Single |
Height | 5.33 mm | Length | 5.21 mm |
Product Type | MOSFET | Factory Pack Quantity | 500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | FET | Width | 4.19 mm |
Unit Weight | 0.016000 oz |
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Availability: 5068 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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