Payment Method +




Single N-Channel Power MOSFET 80V, 203A, 2.1mΩ
SO-8Manufacturer:
Mfr.Part #:
NVMFS6H800NT1G
Datasheet:
Series: NVMFS6H800N
Case Outline:
507BA
MSL Temp (°C):
260
Container Type:
REEL
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on NVMFS6H800NT1G. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
The NVMFS6H800NT1G is a high-performance MOSFET transistor from ON Semiconductor, designed for switching power supplies, power switches, and 48V systems. This device features a small footprint (5x6mm) with low RDS(on), QG, and capacitance, making it suitable for space-constrained applications. The NVMFS6H800NT1G also offers wettable flank options (NWF) and is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial applications. Additionally, the device complies with RoHS regulations. With its low power consumption and high efficiency, this MOSFET transistor is an excellent choice for a wide range of applications where space, power, and performance are critical.
According to the product information, the features of NVMFS6H800NT1G are:
These features make it suitable for applications such as switching power supplies, power switches (High Side Driver, Low Side Driver, H-Bridges etc.), and 48V systems.
The package type of NVMFS6H800NT1G is DFN (Dual Flat No-Lead).
The manufacturer of the NVMFS6H800NT1G is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and supplies power management, analog, sensors, logic, timing, connectivity, and discrete components.
According to the product information, the application areas of NVMFS6H800NT1G are:
Status | Active | Case Outline | 507BA |
MSL Temp (°C) | 260 | Container Type | REEL |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 203 A | Rds On - Drain-Source Resistance | 2.1 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 85 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Configuration | Single | Fall Time | 85 ns |
Forward Transconductance - Min | 138 S | Product Type | MOSFET |
Rise Time | 89 ns | Factory Pack Quantity | 1500 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 97 ns |
Typical Turn-On Delay Time | 25 ns | Unit Weight | 0.026455 oz |
Package/Case | SO-8 |
After-Sales & Settlement Related
Payment Method +
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method +
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product Quality Guarantee +
Returns and exchanges are supported, provided the items remain in their original condition.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices above are for reference only.
Marriage. Such leds do not work for a short time, from the matrix 3x3, shine 3-4 pcs. Led. To see, you need to cover with a black film.