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NVMFS6H800NT1G +BOM

Single N-Channel Power MOSFET 80V, 203A, 2.1mΩ

NVMFS6H800NT1G Information

Description

The NVMFS6H800NT1G is a high-performance MOSFET transistor from ON Semiconductor, designed for switching power supplies, power switches, and 48V systems. This device features a small footprint (5x6mm) with low RDS(on), QG, and capacitance, making it suitable for space-constrained applications. The NVMFS6H800NT1G also offers wettable flank options (NWF) and is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial applications. Additionally, the device complies with RoHS regulations. With its low power consumption and high efficiency, this MOSFET transistor is an excellent choice for a wide range of applications where space, power, and performance are critical.

Features

According to the product information, the features of NVMFS6H800NT1G are:

  • Small Footprint (5x6 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • NVMFS6H800NWF − Wettable Flank Option
  • AEC-Q101 Qualified and PPAP Capable
  • RoHS Compliant

These features make it suitable for applications such as switching power supplies, power switches (High Side Driver, Low Side Driver, H-Bridges etc.), and 48V systems.

Package

The package type of NVMFS6H800NT1G is DFN (Dual Flat No-Lead).

Manufacturer

The manufacturer of the NVMFS6H800NT1G is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and supplies power management, analog, sensors, logic, timing, connectivity, and discrete components.

Applications

According to the product information, the application areas of NVMFS6H800NT1G are:

  • Switching power supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • 48V systems

Specifications

Status Active Case Outline 507BA
MSL Temp (°C) 260 Container Type REEL
Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 203 A Rds On - Drain-Source Resistance 2.1 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 85 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 200 W
Channel Mode Enhancement Qualification AEC-Q101
Configuration Single Fall Time 85 ns
Forward Transconductance - Min 138 S Product Type MOSFET
Rise Time 89 ns Factory Pack Quantity 1500
Subcategory MOSFETs Typical Turn-Off Delay Time 97 ns
Typical Turn-On Delay Time 25 ns Unit Weight 0.026455 oz
Package/Case SO-8

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Ratings and Reviews

More
E
E**h 10/03/2023

Marriage. Such leds do not work for a short time, from the matrix 3x3, shine 3-4 pcs. Led. To see, you need to cover with a black film.

3
J
J**b 08/08/2023

Delivery to volgograd is eight days. The track was not tracked. Worker, under load did not check. I took it in a box, in stock.

14
S
S**n 12/17/2020

All good fast delivery

13
L
L**a 12/16/2020

Quickly corresponds to the description

8

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NVMFS6H800NT1G Datasheet PDF

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