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See Technical Specifications

MJD45H11G

The MJD45H11G is a power bipolar junction transistor (BJT) capable of dissipating up to 1750mW of power

Manufacturer:

Onsemi
Mfr.Part #:

MJD45H11G
Datasheet:

MJD45H11G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

369C
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for MJD45H11G

Email: [email protected]

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Tel: +852 95804164

MJD45H11G General Description

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Key Features

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage V_CE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant

Application

Audio amplification

Specifications

Status	Active	Compliance	PbAHP
Case Outline	369C	MSL Type	1
MSL Temp (°C)	260	Container Type	TUBE
Container Qty.	75	ON Target	N
Polarity	PNP	Type	General Purpose
VCE(sat) Max (V)	1	IC Cont. (A)	8
VCEO Min (V)	80	VEBO (V)	5
VBE(sat) (V)	1.5	hFE Min	60
PTM Max (W)	20	Pricing ($/Unit)	$0.4279Sample