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2N5550 +BOM

NPN Bipolar Transistor 2N5550

Manufacturer:

Onsemi
Mfr.Part #:

2N5550
Datasheet:

2N5550 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

140 V
EDA/CAD Models:

Request Free CAD Models for 2N5550

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Tel: +852 95804164

2N5550 General Description

The High Voltage NPN Bipolar Transistor is a versatile tool that offers unparalleled performance in various applications. Housed in the reliable TO-92 package, this transistor can withstand moderate power levels, making it an ideal choice for many industrial and commercial projects. Its high voltage capabilities make it perfect for tasks requiring precision and reliability. Whether you need to amplify signals or switch on/off, the 2N55S0 has got you covered

Key Features

Pb-Free Packages are Available

Application

AMPLIFIER

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	140 V	Collector- Base Voltage VCBO	160 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	250 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	600 mA
DC Collector/Base Gain hfe Min	60	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm